Defect correlations, metal-insulator transition, and magnetic order in ferromagnetic semiconductors

Details Defect correlations, metal-insulator transition, and magnetic order in ferromagnetic semiconductors Defect correlations, metal-insulator transition, and magnetic order in ferromagnetic semiconductors

2002-09-03

arxiv.org/abs/cond-mat/0209055v1

Physics

Condensed Matter

Materials Science

8 pages, 6 figures included, to be published in the proceedings of ICPS 2002, Edinburgh

Scientific paper

Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong correlations between defect positions during growth and annealing. We show that these correlations are required to understand the experimentally observed transport and magnetic properties as well as the persistence of the energy gap upon doping with magnetic ions.

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