Dangling bonds in a-Si:H revisited: A combined Multifrequency EPR and DFT Study

Details Dangling bonds in a-Si:H revisited: A combined Multifrequency EPR and DFT Study Dangling bonds in a-Si:H revisited: A combined Multifrequency EPR and DFT Study

2011-03-29

arxiv.org/abs/1103.5641v2

Physics

Condensed Matter

Materials Science

26 pages, 4 figures, 1 table, revised version

Scientific paper

Multifrequency pulsed electron paramagnetic resonance (EPR) spectroscopy using S-, X-, Q- and W-Band frequencies (3.6, 9.7, 34, and 94 GHz, respectively) was employed to study paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H). The improved spectral resolution at high magnetic field reveals a rhombic splitting of the g-tensor with the following principal values: g_x=2.0079, g_y=2.0061 and g_z=2.0034 and shows pronounced g-strain, i.e., the principal values are widely distributed. The multifrequency approach furthermore yields precise ^{29}Si hyperfine data. Density functional theory (DFT) calculations on 26 computer-generated a-Si:H dangling-bond models yielded g-values close to the experimental data but deviating hyperfine interaction values. We show that paramagnetic coordination defects in a-Si:H are more delocalized than computer-generated dangling-bond defects and discuss models to explain this discrepancy.

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