Damping of Growth Oscillations in Molecular Beam Epitaxy: A Renormalization Group Approach

Details Damping of Growth Oscillations in Molecular Beam Epitaxy: A Renormalization Group Approach Damping of Growth Oscillations in Molecular Beam Epitaxy: A Renormalization Group Approach

1997-07-23

arxiv.org/abs/cond-mat/9707247v1

Physics

Condensed Matter

Statistical Mechanics

17 Pages Latex

Scientific paper

10.1051/jp1:1997105

The conserved Sine-Gordon Equation with nonconserved shot noise is used to model homoepitaxial crystal growth. With increasing coverage the renormalized pinning potential changes from strong to weak. This is interpreted as a transition from layer-by-layer to rough growth. The associated length and time scales are identified, and found to agree with recent scaling arguments. A heuristically postulated nonlinear term $\nabla^2 (\nabla h)^2$ is created under renormalization.

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