Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

Details Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

2009-03-30

arxiv.org/abs/0903.5278v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figs, Accepted Physical review letters changes to referee comments + supplement

Scientific paper

10.1103/PhysRevLett.104.017402

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

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