CVD of CrO2: towards a lower temperature deposition process

Details CVD of CrO2: towards a lower temperature deposition process CVD of CrO2: towards a lower temperature deposition process

2007-01-26

arxiv.org/abs/cond-mat/0701671v1

Chemical Vapor Deposition 12 (2006) 712

Physics

Condensed Matter

Materials Science

13 pages, 4 figures

Scientific paper

10.1002/cvde.200604233

We report on the synthesis of highly oriented a-axis CrO2 films onto (0001) sapphire by atmospheric pressure CVD from CrO3 precursor, at growth temperatures down to 330 degree Celsius, i.e. close to 70 degrees lower than in published data for the same chemical system. The films keep the high quality magnetic behaviour as those deposited at higher temperature, which can be looked as a promising result in view of their use with thermally sensitive materials, e.g. narrow band gap semiconductors.

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