Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective

Details Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective

2006-03-01

arxiv.org/abs/cond-mat/0603033v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1109/LED.2006.889219

By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), where A is a technology-specific constant, g is function of geometrical factors like stick length (LS), channel length (LC), and stick density (rho_S) and f is a function of drain (VD) and gate (VG) biasing conditions. This scaling formula implies that the measurement of full I-V characteristics of a single NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

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