Current-voltage characteristics of a tunnel junction with resonant centers

Details Current-voltage characteristics of a tunnel junction with resonant centers Current-voltage characteristics of a tunnel junction with resonant centers

1994-05-10

arxiv.org/abs/cond-mat/9405026v1

Physics

Condensed Matter

9 pages, REVTEX 3.0, 2 .ps figures from vladimir@margo.cas.neu.edu, NUB-3088

Scientific paper

10.1103/PhysRevB.50.5721

We calculate the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy $E_c$ between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures $T \ll E_c$ the I-V characteristic is linear in $V$ both for $VE_c$ and changes slope at $V=E_c$. This behavior reflects the energy spectrum of the impurity electrons - the finite value of the charging energy $E_c$. At $T \sim E_c$ the junction reveals an ohmic-like behavior as a result of the smearing out of the charging effects by the thermal fluctuations.

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