Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

Details Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

1997-07-23

arxiv.org/abs/cond-mat/9707245v1

Phys. Rev. B 55, 2466 (1997)

Physics

Condensed Matter

Tex file and 3 postscript figures

Scientific paper

10.1103/PhysRevB.55.2466

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.

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