Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer

Details Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer

2009-02-03

arxiv.org/abs/0902.0644v1

J. Appl. Phys. 105, 07D101 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 3 figures, 3 authors

Scientific paper

10.1063/1.3055357

We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a current-confined-path (CCP) structure made of a nano-oxide-layer (NOL). In order to calculate the MR ratio of the system, the continuity equations for charge and spin currents are numerically solved with the three-dimensional CCP geometry by use of finite element method. It is confirmed that the MR ratio is enhanced by the CCP structure, which is consistent with the experimental results.

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