Current-induced switching in single ferromagnetic layer nanopillar junctions

Details Current-induced switching in single ferromagnetic layer nanopillar junctions Current-induced switching in single ferromagnetic layer nanopillar junctions

2005-11-07

arxiv.org/abs/cond-mat/0511144v1

Applied Physics Letters 88, 162506 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 2 figures

Scientific paper

10.1063/1.2195780

Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, a factor of 5 greater than the anisotropic magnetoresistance (AMR) effect. We present an experimentally obtained low field phase diagram of current induced magnetization dynamics in single ferromagnetic layer pillar junctions.

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