Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

Details Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

2004-04-28

arxiv.org/abs/cond-mat/0404663v1

Physics

Condensed Matter

Materials Science

13 pages, 3 figures

Scientific paper

10.1143/JJAP.43.L825

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.

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