Current-induced highly dissipative domains in high Tc thin films

Details Current-induced highly dissipative domains in high Tc thin films Current-induced highly dissipative domains in high Tc thin films

2002-05-28

arxiv.org/abs/cond-mat/0205593v1

Physics

Condensed Matter

Superconductivity

9 pages, 9 figures, Revtex, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.66.014522

We have investigated the resistive response of high Tc thin films submitted to a high density of current. For this purpose, current pulses were applied into bridges made of Nd(1.15)Ba(1.85)Cu3O7 and Bi2Sr2CaCu2O8. By recording the time dependent voltage, we observe that at a certain critical current j*, a highly dissipative domain develops somewhere along the bridge. The successive formation of these domains produces stepped I-V characteristics. We present evidences that these domains are not regions with a temperature above Tc, as for hot spots. In fact this phenomenon appears to be analog to the nucleation of phase-slip centers observed in conventional superconductors near Tc, but here in contrast they appear in a wide temperature range. Under some conditions, these domains will propagate and destroy the superconductivity within the whole sample. We have measured the temperature dependence of j* and found a similar behavior in the two investigated compounds. This temperature dependence is just the one expected for the depairing current, but the amplitude is about 100 times smaller.

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