Current-Driven Magnetic Memory with Tunable Magnetization Switching

Details Current-Driven Magnetic Memory with Tunable Magnetization Switching Current-Driven Magnetic Memory with Tunable Magnetization Switching

2001-05-15

arxiv.org/abs/cond-mat/0105290v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, with 6 figures

Scientific paper

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the layers. The I-V loops show asymmetric behavior with hysteresis. When electrons flow in the direction from thick to thin Co layer (positive current), multiple switches were observed on increasing current up to a chosen maximum positive I(write). On decreasing current from I(write), the I-V curve was smooth and characterized by considerably lower resistance. Under reverse current, an abrupt switch to the high resistance state occurred at the current value I(erase)~ -0.9*I(write). Resistance had a maximum at zero current in both states, where the ratio R(high)/R(low) could be as high as factor of four.

Affiliated with

Also associated with

No associations

Rating

Current-Driven Magnetic Memory with Tunable Magnetization Switching does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Current-Driven Magnetic Memory with Tunable Magnetization Switching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current-Driven Magnetic Memory with Tunable Magnetization Switching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-61898