Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Details Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

2010-05-06

arxiv.org/abs/1005.0946v2

APPLIED PHYSICS LETTERS 97, 262102 (2010)

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.

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