Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

Details Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

2006-02-06

arxiv.org/abs/cond-mat/0602135v1

Jap. Journ. Appl. Phys. 45, issue 5A, 3860, (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1143/JJAP.45.3860

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.

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