Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs

Details Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs

2010-01-22

arxiv.org/abs/1001.3909v1

Physical Review B, 81, 045208 (2010)

Physics

Condensed Matter

Materials Science

8 pages, 7 figures

Scientific paper

The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC is proportional to p^{\gamma}, where the exponent \gamma = 0.19 \pm 0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of gamma is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.

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