Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

Details Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

2002-01-10

arxiv.org/abs/cond-mat/0201157v2

Phys. Rev. B 66, 012402 (2002)

Physics

Condensed Matter

Materials Science

4 pages, 2 figures, 1 table; web-link in Ref.16 corrected, Ref. 18 added

Scientific paper

10.1103/PhysRevB.66.012402

We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ suppression due to collective fluctuations of the ordered moments. We show that high critical temperatures in these ferromagnetic semiconductors require both the large magnetic susceptibility contribution from the valence band's heavy holes and the large spin stiffness that results from strong spin-orbit coupling in the valence band. Our calculations demonstrate that this model for the ferromagnetism of these systems is fully consistent with the room-temperature ferromagnetism reported for Mn doped nitrides.

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