Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers

Details Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers

2002-12-09

arxiv.org/abs/cond-mat/0212180v1

Physics

Condensed Matter

Materials Science

3 pages, 4 figures, submitted to APL

Scientific paper

10.1063/1.1573369

We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements reveal a decrease of the Curie temperature from the surface to the GaMnAs/GaAs interface. While high resolution x-ray diffraction clearly shows a homogeneous Mn distribution, a pronounced decrease of the carrier concentration from the surface towards the GaMnAs/GaAs interface has been found by Raman spectroscopy as well as electrochemical capacitance-voltage profiling. The gradient in Curie temperature seems to be a general feature of GaMnAs layers grown at low-temperature. Possible explanations are discussed.

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