Physics – Condensed Matter – Materials Science
Scientific paper
2011-02-25
Physics
Condensed Matter
Materials Science
7 pages, 10 figures
Scientific paper
We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high N\'eel temperature. Results of X-ray diffraction, magnetization, transport, and neutron diffraction measurements we performed on chemically synthesized CuMnAs are consistent with the theory predictions.
Beran Premysl
Jungwirth Tomas
Maca Frantisek
Marti X.
Masek Jiri
No associations
LandOfFree
CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-302066