Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission

Details Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission

2009-09-02

arxiv.org/abs/0909.0345v1

Physics

Condensed Matter

Materials Science

Scientific paper

Cesium adsorption on 2x4 GaAs (001) was studied by photoemission and low energy electron diffraction. The different Cs induced changes of the As 3d and Ga 3d core level spectra show that charge transfer is almost complete for Ga surface sites, but is negligible to surface As at a coverage smaller than 0.3 ML. The situation is opposite for a coverage larger than 0.3ML, at which transfer occurs to As but no longer to Ga. Charge transfer to As atoms leads to disordering and destabilization and induces surface conversion from the As-rich surface to the Ga-rich 4x2 one after annealing at a reduced temperature of 450 C.

Affiliated with

Also associated with

No associations

Rating

Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-12106