Crystalline-Electric-Field Effect on the Resistivity of Ce-based Heavy Fermion Systems

Details Crystalline-Electric-Field Effect on the Resistivity of Ce-based Heavy Fermion Systems Crystalline-Electric-Field Effect on the Resistivity of Ce-based Heavy Fermion Systems

2006-06-15

arxiv.org/abs/cond-mat/0606400v1

J. Phys. Soc. Jpn. 75 (2006) No.6, p.064706

Physics

Condensed Matter

Strongly Correlated Electrons

37 pages, 22 figures

Scientific paper

10.1143/JPSJ.75.064706

The behavior of the resistivity of Ce-based heavy fermion systems is studied using a 1/$N$-expansion method a la Nagoya, where $N$ is the spin-orbital degeneracy of f-electrons. The 1/$N$-expansion is performed in terms of the auxiliary particles, and a strict requirement of the local constraints is fulfilled for each order of 1/N. The physical quantities can be calculated over the entire temperature range by solving the coupled Dyson equations for the Green functions self-consistently at each temperature. This 1/N-expansion method is known to provide asymptotically exact results for the behavior of physical quantities in both low- and high-energy regions when it is applied to a single orbital periodic Anderson model (PAM). On the basis of a generalized PAM including crystalline-electric-field splitting with a single conduction band, the pressure dependence of the resistivity is calculated by parameterizing the effect of pressure as the variation of the hybridization parameter between the conduction electrons and f-electrons. The main result of the present study is that the double-peak structure of the $T$-dependence of the resistivity is shown to merge into a single-peak structure with increasing pressure.

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