Crystal Growth and Characterization of Doped CZT Crystals

Details Crystal Growth and Characterization of Doped CZT Crystals Crystal Growth and Characterization of Doped CZT Crystals

2001-07-04

arxiv.org/abs/cond-mat/0107081v1

Physics

Condensed Matter

Materials Science

9 pages, 11 figures

Scientific paper

Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon overpressure was used to reduce the cadmium loss. The crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The doping was carried out by three different ways: 1) by adding of the pure metals during growth runs; 2) by adding of the tellurides of the metals during growth runs; or 3) by inserting of the metal tellurides during synthesis of the starting CZT material. Some of the growth process parameters were also varied. The as-grown CZT ingots had diameters of either 15 or 38 mm. The influence of the doping on CZT properties, particularly the conductivity type and specific electrical resistivity, will be discussed. Energy spectra from alpha particles (U-233, Ra-226, and U-233+Pu-239+Pu-238) and from different gamma sources (Cs-137, Co-60, Co-57, Am-241) will be reported.

Affiliated with

Also associated with

No associations

Rating

Crystal Growth and Characterization of Doped CZT Crystals does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Crystal Growth and Characterization of Doped CZT Crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal Growth and Characterization of Doped CZT Crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-410319