Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon

Details Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon

2010-10-07

arxiv.org/abs/1010.1509v2

RSI 82, 033705 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 5 Figures, Accepted to Review of Scientific Instrument

Scientific paper

10.1063/1.3554438

We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semi-quantitative finite-element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and DC biases.

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