Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Details Cryogenic instrumentation for fast current measurement in a silicon single electron transistor Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

2009-04-21

arxiv.org/abs/0904.3193v3

J. Appl. Phys. 106, 033705 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 6 figures, published in J. Appl. Phys

Scientific paper

10.1063/1.3191671

We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed.

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