Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

Details Crossover between distinct mechanisms of microwave photoresistance in bilayer systems Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

2010-02-11

arxiv.org/abs/1002.2295v1

Phys. Rev. B 81, 085311 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 4 figures

Scientific paper

10.1103/PhysRevB.81.085311

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

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