Critical Temperatures of a Two-Band Model for Diluted Magnetic Semiconductors

Details Critical Temperatures of a Two-Band Model for Diluted Magnetic Semiconductors Critical Temperatures of a Two-Band Model for Diluted Magnetic Semiconductors

2006-01-25

arxiv.org/abs/cond-mat/0601593v1

Physics

Condensed Matter

Materials Science

6 pages, 5 eps figures, to be published in Physical Review B

Scientific paper

10.1103/PhysRevB.73.075206

Using Dynamical Mean Field Theory (DMFT) and Monte Carlo (MC) simulations, we study the ferromagnetic transition temperature Tc of a two-band model for Diluted Magnetic Semiconductors (DMS), varying coupling constants, hopping parameters, and carrier densities. We found that Tc is optimized at all fillings p when both impurity bands (IB) fully overlap in the same energy range, namely when the exchange couplings J and bandwidths are identical. The optimal Tc is found to be about twice larger than the maximum value obtained in the one-band model, showing the importance of multiband descriptions of DMS at intermediate J's.

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