Critical issues in the formation of quantum computer test structures by ion implantation

Details Critical issues in the formation of quantum computer test structures by ion implantation Critical issues in the formation of quantum computer test structures by ion implantation

2009-04-29

arxiv.org/abs/0904.4688v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.

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