Critical Exponents for Diluted Resistor Networks

Details Critical Exponents for Diluted Resistor Networks Critical Exponents for Diluted Resistor Networks

1998-12-29

arxiv.org/abs/cond-mat/9812413v1

Phys. Rev. E 59, 4919-4930 (1999)

Physics

Condensed Matter

Statistical Mechanics

27 pages, 14 figures

Scientific paper

10.1103/PhysRevE.59.4919

An approach by Stephen is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky. By a decomposition of the principal Feynman diagrams we obtain a type of diagrams which again can be interpreted as resistor networks. This new interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent $\phi$ up to second order in $\epsilon=6-d$, where $d$ is the spatial dimension. Our result $\phi=1+\epsilon /42 +4\epsilon^2 /3087$ verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts--model formulation of the random resistor network.

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