Critical currents and self organization in quantum Hall bilayers

Details Critical currents and self organization in quantum Hall bilayers Critical currents and self organization in quantum Hall bilayers

2010-03-26

arxiv.org/abs/1003.5191v2

Phys. Rev. Lett. 105, 236805 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages; 2 figures

Scientific paper

10.1103/PhysRevLett.105.236805

We present a theory of the critical interlayer tunneling current in a disordered quantum Hall bilayer at total filling factor one, allowing for the effect of static vortices. In agreement with recent experiments [Phys. Rev. B 80, 165120 (2009); ibid. 78, 075302 (2008)], we find that this critical current is proportional to the area of the sample and is comparable in magnitude to observed values. This reflects the formation of a Bean critical state as a result of current injection at the boundary. We predict a crossover to a critical current proportional to the square-root of area as either sample size or electron density decreases. We also predict a peak in the critical current as the electron density varies at fixed layer separation.

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