Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

Details Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

2001-03-13

arxiv.org/abs/cond-mat/0103283v1

Semicond. Sci.Technol. v16, 386 (2001)

Physics

Condensed Matter

Strongly Correlated Electrons

Extended version of the preprint cond-mat/0002436; 21 pages, 6 figures

Scientific paper

10.1088/0268-1242/16/5/318

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as a function of electron density. When approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature. These features have much in common with those expected for an Anderson transition.

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