Critical behaviour near the metal-insulator transition of a doped Mott insulator

Details Critical behaviour near the metal-insulator transition of a doped Mott insulator Critical behaviour near the metal-insulator transition of a doped Mott insulator

2001-03-15

arxiv.org/abs/cond-mat/0103315v2

Eur. Phys. J. B 22, 283 (2001)

Physics

Condensed Matter

Strongly Correlated Electrons

13 pages, 3 figures

Scientific paper

10.1007/PL00011147

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for $U$ larger than a critical value $U_c$, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping.

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