Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

Details Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

2006-12-15

arxiv.org/abs/cond-mat/0612399v1

Pisma v ZhETF, v84(12), 780 (2006); [JETP Letters, v.84(12), (2006)]

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 4 figures, uses jetpl.cls

Scientific paper

We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the \rho(T,B) data and the RG theory in a wide range of the in-plane fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.

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