Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective

Details Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective

2008-11-27

arxiv.org/abs/0811.4612v2

Phys. Rev. Lett. 102, 156402 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

4+ pages, 4 figures, v2: minor changes, accepted for publication in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.102.156402

We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) - the simplest extension of dynamical mean field theory (DMFT) capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.

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