Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

Details Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

2010-10-22

arxiv.org/abs/1010.4723v2

Physical Review B 82, 195309 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 6 figures

Scientific paper

10.1103/PhysRevB.82.195309

We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.

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