Coulomb-induced Rashba spin-orbit coupling in semiconductor quantum wells

Details Coulomb-induced Rashba spin-orbit coupling in semiconductor quantum wells Coulomb-induced Rashba spin-orbit coupling in semiconductor quantum wells

2010-02-08

arxiv.org/abs/1002.1510v2

Phys. Rev. Lett. 104, 226601 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4+ pages, 6 figures

Scientific paper

10.1103/PhysRevLett.104.226601

In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave functions of a quantum well so that electrons occupying the first (lowest) subband conserve their spin projection along the growth axis (Sz), while the electrons occupying the second subband precess due to Rashba SOI. Such a specially designed quantum well may be used as a spin relaxation trigger: electrons conserve Sz when the applied voltage (or current) is lower than a certain threshold V*; higher voltage switches on the Dyakonov-Perel spin relaxation.

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