Coulomb explosion sputtering of selectively oxidized Si

Details Coulomb explosion sputtering of selectively oxidized Si Coulomb explosion sputtering of selectively oxidized Si

2009-05-27

arxiv.org/abs/0905.4343v2

Physics

Condensed Matter

Materials Science

9 pages and 3 figures

Scientific paper

We have studied multiply charged Arq+ ion induced potential sputtering of a unique system comprising of coexisting Silicon and Silicon oxide surfaces. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), where ripple structures are formed and one side of each ripple gets more oxidized. It is observed that higher the potential energy of Arq+ ion, higher the sputtering yield of the non conducting (oxide) side of the ripple as compared to the semiconducting side. The results are explained in terms of Coulomb explosion model where potential sputtering depends on the conductivity of the ion impact sites.

Affiliated with

Also associated with

No associations

Rating

Coulomb explosion sputtering of selectively oxidized Si does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Coulomb explosion sputtering of selectively oxidized Si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coulomb explosion sputtering of selectively oxidized Si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-527341