Coulomb blockade in a Si channel gated by an Al single-electron transistor

Details Coulomb blockade in a Si channel gated by an Al single-electron transistor Coulomb blockade in a Si channel gated by an Al single-electron transistor

2007-08-12

arxiv.org/abs/0708.1520v2

Appl. Phys. Lett. 91, 142117 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures, 1 table; typos corrected, minor clarifications added; published in APL

Scientific paper

10.1063/1.2793712

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.

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