Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

Details Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

2006-12-15

arxiv.org/abs/cond-mat/0612413v1

Appl. Phys. Lett. 90, 033103 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures, to appear in Appl. Phys. Lett

Scientific paper

10.1063/1.2431760

Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. We also observe a transition from pure Coulomb blockade to peaks with a Fano lineshape.

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