Physics
Scientific paper
Sep 1995
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..175k&link_type=abstract
Proc. SPIE Vol. 2554, p. 175-184, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan
Physics
1
Scientific paper
A CoSi(subscript 2)/strained-Si(subscript 1-x)Ge(subscript x)-Schottky barrier detector is proposed for detection of infrared radiation in the 3 - 5 micrometers window. It could be a substitute for PtSi/Si-Schottky barrier detectors, which have already been integrated with readout electronics, but which imply the disadvantage of having the metal Pt in the line as a possible source of contamination. A silicidation study on strained Si(subscript 1-x)Ge(subscript x)-layers with sacrificial Si-layers on top has been carried out to realize CoSi(subscript 2)/strained-Si(subscript 1-x)Ge(subscript x)-interfaces, which will form the heart of the detector. The possibilities to integrate this detector with readout electronics are critically reviewed. First CoSi(subscript 2)/Si(subscript 1-x)Ge(subscript x)-detectors have been processed which yield barrier heights as low as 229 meV.
Caymax Matty
Donaton Ricardo A.
Kolodinski Sabine
Maex Karen
Roca Elisenda
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