Advances in infrared antimonide technology

Details Advances in infrared antimonide technology Advances in infrared antimonide technology

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..167m&link_type=abstract

Proc. SPIE Vol. 2554, p. 167-174, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

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Recently, significant advances have been made in both the application and production of the narrow gap, antimonide compound semiconductors. Growth of InSb and GaSb at 3 and even 4 inch diameters has been achieved with good homogeneity and acceptable defect density. Advances are being made to achieve a wafer surface finish suitable for direct epitaxy. New binary applications for large-area focalplane detector arrays, high resistivity substrates and thermophotovoltaics, and for the ternary (Ga,In)Sb are discussed.

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