Correlation effects in the density of states of annealed GaMnAs

Details Correlation effects in the density of states of annealed GaMnAs Correlation effects in the density of states of annealed GaMnAs

2006-05-31

arxiv.org/abs/cond-mat/0605753v2

Physics

Condensed Matter

Strongly Correlated Electrons

Replaced with revised version. To appear in Phys. Rev. B

Scientific paper

We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of states of GaMnAs. Our experiment shows that low temperature annealing is a direct empirical tool that modifies the correlation gap and thus the electron-electron interaction. Consistent with previous results on boron-doped silicon we find, as a function of voltage, a transition across the phase boundary delimiting the direct and exchange correlation regime.

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