Correlating the nanostructure and electronic properties of InAs nanowires

Details Correlating the nanostructure and electronic properties of InAs nanowires Correlating the nanostructure and electronic properties of InAs nanowires

2009-12-08

arxiv.org/abs/0912.1511v2

Nano Lett. 10, 1618 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Related papers at http://pettagroup.princeton.edu

Scientific paper

10.1021/nl904053j

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominally defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

Affiliated with

Also associated with

No associations

Rating

Correlating the nanostructure and electronic properties of InAs nanowires does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Correlating the nanostructure and electronic properties of InAs nanowires, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Correlating the nanostructure and electronic properties of InAs nanowires will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-386035