Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

Details Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

2010-01-29

arxiv.org/abs/1001.5449v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.

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