Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-08-14
IEEE Trans. on Device and Materials Reliability, Vol.4,pp.99-109, March 2004
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Journal Paper
Scientific paper
This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed high-performing ULSI applications. The review assesses recent proposals to circumvent the SCE in SOI MOSFETs and a short evaluation of strengths and weaknesses specific to each attempt is presented. A new device structure called the dual-material gate (DMG) SOI MOSFET is discussed and its efficacy in suppressing SCEs such as drain-induced barrier lowering (DIBL), channel length modulation (CLM) and hot-carrier effects, all of which affect the reliability of ultra-small geometry MOSFETs, is assessed.
Chaudhry Anurag
Kumar Jagadesh M.
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