Controlled single electron transfer between Si:P dots

Details Controlled single electron transfer between Si:P dots Controlled single electron transfer between Si:P dots

2005-06-23

arxiv.org/abs/cond-mat/0506594v6

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 figures, 3 pages

Scientific paper

10.1063/1.2203740

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

Affiliated with

Also associated with

No associations

Rating

Controlled single electron transfer between Si:P dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Controlled single electron transfer between Si:P dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled single electron transfer between Si:P dots will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-624113