Controlled oxygen vacancy induced p-type conductivity in HfO{2-x} thin films

Details Controlled oxygen vacancy induced p-type conductivity in HfO{2-x} thin films Controlled oxygen vacancy induced p-type conductivity in HfO{2-x} thin films

2011-11-11

arxiv.org/abs/1111.2785v1

Appl. Phys. Lett. 99, 112902 (2011)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.3637603

We have synthesized highly oxygen deficient HfO$_{2-x}$ thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10^{21} charge carriers per cm3. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

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