Physics – Condensed Matter – Materials Science
Scientific paper
2008-07-03
Physics
Condensed Matter
Materials Science
19 pages, six figure - Supporting Information included
Scientific paper
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are negatively charged, it is found that Coulomb repulsion causes DBs separated by less than ~2 nm to experience reduced localized charge. The unoccupied states so created allow a previously unobserved electron tunnel-coupling of DBs, evidenced by a pronounced change in the time-averaged view recorded by scanning tunneling microscopy. Direct control over net electron occupation and tunnel-coupling of multi-DB ensembles through separation controlled is demonstrated. Through electrostatic control, it is shown that a pair of tunnel-coupled DBs can be switched from a symmetric bi-stable state to one exhibiting an asymmetric electron occupation. Similarly, the setting of an antipodal state in a square assembly of four DBs is achieved, demonstrating at room temperature the essential building block of a quantum cellular automata device.
DiLabio Gino A.
Haider Muhammad B.
Livadaru Lucian
Mutus Josh Y.
Pitters Jason L.
No associations
LandOfFree
Controlled Coupling and Occupation of Silicon Atomic Quantum Dots does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Controlled Coupling and Occupation of Silicon Atomic Quantum Dots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled Coupling and Occupation of Silicon Atomic Quantum Dots will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-116155