Controllable patterning and CVD growth of isolated carbon nanotubes with direct parallel writing of catalyst using Dip Pen Nanolithography

Details Controllable patterning and CVD growth of isolated carbon nanotubes with direct parallel writing of catalyst using Dip Pen Nanolithography Controllable patterning and CVD growth of isolated carbon nanotubes with direct parallel writing of catalyst using Dip Pen Nanolithography

2010-09-30

arxiv.org/abs/1009.6210v1

Small, 5, 2009, pp.2523-2527

Physics

Condensed Matter

Materials Science

17 pages and 4 figures, 6 page supporting information and 4 supporting figures. (Cover article)

Scientific paper

We report a process to fabricate carbon nanotubes (CNT) by chemical vapor deposition at predetermined location. This process was enabled by patterning catalyst nanoparticles directly on silicon substrates with nanometer-scale precision using Dip Pen Nanolithography(R) (DPN(R)). A multi-pen writing method was employed to increase the patterning rate. The development of new molecular inks for the deposition of the precursor catalyst resulted in a high yield of isolated carbon nanotubes, ideal for subsequent device fabrication. Here, we demonstrate the advantages of the new method for producing high quality isolated CNT in scalable array geometries.

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