Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots

Details Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots

2007-03-02

arxiv.org/abs/cond-mat/0703059v1

Physics

Condensed Matter

Other Condensed Matter

3 Figures

Scientific paper

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.

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