Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

Details Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

2007-01-02

arxiv.org/abs/cond-mat/0701031v1

Appl. Phys. Lett. 89, 263109 (2006)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1063/1.2424446

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.

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